JPH0577287B2 - - Google Patents
Info
- Publication number
- JPH0577287B2 JPH0577287B2 JP62092678A JP9267887A JPH0577287B2 JP H0577287 B2 JPH0577287 B2 JP H0577287B2 JP 62092678 A JP62092678 A JP 62092678A JP 9267887 A JP9267887 A JP 9267887A JP H0577287 B2 JPH0577287 B2 JP H0577287B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist
- photomask
- photoresist layer
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62092678A JPS63258022A (ja) | 1987-04-15 | 1987-04-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62092678A JPS63258022A (ja) | 1987-04-15 | 1987-04-15 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63258022A JPS63258022A (ja) | 1988-10-25 |
JPH0577287B2 true JPH0577287B2 (en]) | 1993-10-26 |
Family
ID=14061143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62092678A Granted JPS63258022A (ja) | 1987-04-15 | 1987-04-15 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63258022A (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005149832A (ja) * | 2003-11-13 | 2005-06-09 | Toray Ind Inc | プラズマディスプレイ用部材の製造方法およびプラズマディスプレイ |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02268416A (ja) * | 1989-04-11 | 1990-11-02 | Matsushita Electron Corp | 半導体装置の製造方法及びそれに使用するフオトマスク |
JPH03266437A (ja) * | 1990-03-16 | 1991-11-27 | Toshiba Corp | 半導体装置の製造方法 |
JP2797854B2 (ja) * | 1992-02-07 | 1998-09-17 | 住友金属工業株式会社 | 半導体装置のコンタクトホール形成方法 |
WO2004077484A1 (ja) * | 2003-02-28 | 2004-09-10 | Matsushita Electric Industrial Co., Ltd. | プラズマディスプレイパネルの製造方法及びプラズマディスプレイパネル |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6224628A (ja) * | 1985-07-24 | 1987-02-02 | Matsushita Electronics Corp | ホトレジストパタ−ンの形成方法 |
JPS6258622A (ja) * | 1985-09-09 | 1987-03-14 | Toshiba Corp | レジストパタ−ン形成方法 |
-
1987
- 1987-04-15 JP JP62092678A patent/JPS63258022A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005149832A (ja) * | 2003-11-13 | 2005-06-09 | Toray Ind Inc | プラズマディスプレイ用部材の製造方法およびプラズマディスプレイ |
Also Published As
Publication number | Publication date |
---|---|
JPS63258022A (ja) | 1988-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6432619B2 (en) | Method for reducing photolithographic steps in a semiconductor interconnect process | |
US6514672B2 (en) | Dry development process for a bi-layer resist system | |
JP3355239B2 (ja) | パターンの形成方法 | |
US5922516A (en) | Bi-layer silylation process | |
JPH0577287B2 (en]) | ||
US6630408B1 (en) | Self alignment process to fabricate attenuated shifting mask with chrome border | |
US5609994A (en) | Method for patterning photoresist film having a stepwise thermal treatment | |
JP3047832B2 (ja) | 半導体装置の製造方法 | |
JPH04348030A (ja) | 傾斜エッチング法 | |
JP2001217305A (ja) | 半導体ウエハおよびその処理方法ならびに半導体装置の製造方法 | |
JP3119021B2 (ja) | 半導体装置のコンタクトホール形成方法 | |
JP3378677B2 (ja) | 半導体装置の製造方法 | |
JP2001326173A (ja) | パターン形成方法 | |
JPH04239116A (ja) | 半導体装置の製造方法 | |
JPH1032190A (ja) | 半導体装置の製造方法 | |
JP2767594B2 (ja) | 半導体装置の製造方法 | |
KR100214277B1 (ko) | 셀 어퍼쳐 제조방법과 반도체소자의 미세패턴 형성방법 | |
KR930006133B1 (ko) | 모스소자의 콘택트홀 형성방법 | |
JP3478226B2 (ja) | 半導体装置の製造方法 | |
KR0130168B1 (ko) | 미세 패턴 형성방법 | |
KR0172799B1 (ko) | 반도체 소자의 미세패턴 형성방법 | |
JP3034071B2 (ja) | 半導体装置の作製方法 | |
JPH0670954B2 (ja) | 半導体装置の製造方法 | |
KR100326430B1 (ko) | 감광막패턴형성방법 | |
KR100282417B1 (ko) | 반도체소자의제조방법 |